0.5dB噪声系数高线性有源偏置低噪声放大器  

Highly Linear Active Bias LNA with 0.5dB Noise Figure

作　　者：吴健[1,2] 郑远 艾宣[1,2] 顾晓瑀 朱彦青[1,2] 陈新宇[1,2] 杨磊[1,2] 钱峰[2] 

机构地区：[1]南京国博电子有限公司 [2]南京电子器件研究所

出　　处：《固体电子学研究与进展》2014年第3期211-215,共5页Research & Progress of SSE

摘　　要：设计了一种宽带、噪声系数仅为0.48dB的有源偏置超低噪声放大器。低噪声放大器采用0.5μm GaAs E-PHEMT工艺研制,2.0mm×2.0mm×0.75mm 8-pin双侧引脚扁平无铅封装,具有低噪声、高增益、高线性等特点,是GSM/CDMA基站应用上理想的一款低噪声放大器。A wideband active bias low noise amplifier with 0.48 dB noise figure is presented. By employing the 0.5 gm GaAs enhancement-mode pHEMT process, the LNA has achieved low noise,high gain and high linearity. The LNA is housed in a 2.0 mm×2.0 mm×0.75 mm minia- ture package with 8-pin dual-flat-lead （DFN）. It is believed that this LNA is an ideal choice for GSM and CDMA cellular infrastructure.

关 键 词：低噪声放大器 高线性 有源偏置 高增益 

分 类 号：TN722.3[电子电信—电路与系统]