含氮CZ硅力学行为研究  

Investigation on Mechanics Behavior of Czochralski-Silicon Grown in Nitrogen Atmosphere

作　　者：石志仪[1] 谢书银[1] 佘思明[1] 李立本[2] 张锦心[2] 

机构地区：[1]中南工业大学应用物理系,湖南长沙410083 [2]浙江大学半导体厂,浙江杭州310027

出　　处：《Journal of Semiconductors》1993年第3期174-180,共7页半导体学报（英文版）

基　　金：高纯硅及硅烷国家重点实验室基金

摘　　要：用抗弯强度方法测定不同含氮量的原生和经550℃,750℃及900℃不等时热处理后直拉硅(NCZ-Si)的力学性能变化,结合红外光谱分析热处理过程氧、氮含量及形态的改变,认为在含氮直拉硅中,氮是以聚集在位错周围的氮氧硅络合物及氮氧硅沉淀初期微粒等多种形式钉扎位错的。The Maximum bending stress are measured on the as-grown and nonisochronal heattreated(at temperatures of 550℃, 750℃ and 900℃) NCZ-silicon crystal with varying nitrogencontent. During heat-treatment, the change of nitrogen, oxygen content and their configurationare analysed by the relevant infrared absorption line variation. It is considered thataround the dislocation, there is congregation of some N-Si-O complexes and iaitial particle ofprecipitate, through which, the nitrogen locks the dislocation.

关 键 词：单晶制备 含氮CZ硅 直拉硅 力学行为 

分 类 号：TN304.053[电子电信—物理电子学]