In_（0．6）Ga_（0．4）As／InP应变量子阱的光致发光  

Photoluminescence Study in Strained In_(0.6)Ga_(0.4)As/InP Quantum Wells

作　　者：高瑛[1] 刘学彦[1] 赵家龙[1] 苏锡安[1] 秦福文[1] 杨树人 刘宝林 陈佰军 刘式墉 

机构地区：[1]中国科学院长春物理研究所,吉林大学电子工程系

出　　处：《Journal of Semiconductors》1995年第5期344-349,共6页半导体学报（英文版）

基　　金：中国科学院长春物理所激发态物理开放实验室资助

摘　　要：本文研究了不同阱宽的Ｉｎ０．６Ｇａ０．４Ａｓ／ＩｎＰ应变量子阱的光致发光，通过量子尺寸效应和压缩应变引起的峰值能量位移判断了不同谱峰的跃迁．在一定的温度范围内，相应量子阱的发光强度随着温度的升高而增加，当温度高出此范围，其光强随温度的升高而减小，此温区不仅与阱宽有关。且随激发光强而变化．我们用量子阱的限制效应和激子的转换机理，初步探讨了此温度范围的形成和消失．Abstract Strained In0.6Ga0.4As/InP quantum well structures with different widths grown by low pressure metalorganic vapor phase epitaxy are investigated by photoluminescence spectra, their optical transitions are identified and shifts of peaks are mainly due to lattice mismatch and quantum size effect. When the barriers are narrow and comparable with the width of wells, the temperture dependence of PL is not only changed with well width but also influenced by excitation light intensity, which can be interpreted in terms of interwell exciton transfer and confinement effect in quantum wells.

关 键 词：INGAAS 磷化铟 应变 量子阱 光致发光 

分 类 号：TN304.2[电子电信—物理电子学] O462.3[理学—电子物理学]