同步辐射光电子能谱研究室温下Na对InP（100）表面氮化反应的影响  

Synchrotron Radiation Photoemission Study of Na-Influenced Nitridation of InP (100) Surface at Room Temperature

作　　者：季航[1] 赵特秀 王晓平 吴建新 徐彭寿 陆尔东 许振嘉 

机构地区：[1]中国科学技术大学物理系,中国科学技术大学结构成分分析中心,中国科学技术大学国家同步辐射实验室,中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1995年第5期395-400,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：利用同步辐射光电子能谱研究了室温下Ｎａ吸附下于Ｐ型ＩｎＰ（１００）表面对其氮化反应的影响．通过Ｐ２ｐ、Ｉｎ４ｄ芯能级谱的变化，对Ｎａ／ＩｎＰ（１００）表面的氮化反应的研究表明，碱金属Ｎａ的吸附对ＩｎＰ（１００）无明显的催化氮化作用，即使采用Ｎ２／Ｎａ／Ｎ２／Ｎａ／Ｎ２／Ｎａ／ＩｎＰ（１００）的类多层结构，在室温下也只有极少量的氨化物形成，而无明显的催化氮化反应发生．碱金属吸附层对Ⅲ－Ⅴ族半导体氮化反应的催化机制不同于碱金属对于元素半导体的催化反应机制，碱金属对元素半导体的催化氮化反应，吸附的碱金属与元素半导体衬底之间无需界面反应发生．而碱金属吸附层和Ⅲ－Ⅴ族半导体衬底之间发生界面反应是碱金属对Ⅲ－Ⅴ族半导体具有催化反应的必要条件．由于碱金属吸附层和衬底之间的界面反应而形成的表面缺陷在Ⅲ－Ⅴ族半导体的催化氮化反应过程中具有重要的作用．Abstract The effect of molecular nitrogen of p-InP(100)surface influenced by alkali metal Na at room temperature is investigated by synchrotron radiation core level photoemission spectroscopy. The study of nitridation of Na/InP (100) system shows that, after the adsorption of Na on InP(100) surface no catalysis nitridation happens. Even using the similar multilayer structure of N2/Na/N2/Na/N2/Na/InP (100), there are tiny amount of nitride formation, no obvious catalysis nitridation is observed. The mechanism of alkali-metal promoted nitridation of Ⅲ-Ⅴ semiconductor is in strong contrast with the alkali-metal promoted nitridation of elemental semiconguctor where no reaction is observed. The reaction between the alkali-metal adsorbate and the Ⅲ-Ⅴ semiconductor substrate is found to be necessary. Since non-reactive interface does not exhibit nitridation, the surface defects play a central role in alkali-metal-promoted nitridation of Ⅲ-Ⅴ semiconductor.

关 键 词：磷化铟 半导体表面 氮化反应 光电子能谱 钠 

分 类 号：TN305.2[电子电信—物理电子学] O472.1[理学—半导体物理]