在微重力下生长的GaAs：Si单晶结构缺陷的X射线研究  

Structure Investigation of Si-Doped GsAs Single Crystal Grown Under Microgravity Condition by X-Ray Methods

作　　者：蒋四南[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所,中国科学院半导体材料科学实验室

出　　处：《Journal of Semiconductors》1995年第3期167-169,共3页半导体学报（英文版）

摘　　要：本文对空间生长ＧａＡＳ：Ｓｉ单晶，沿着生长方向用Ｘ射线形貌和双晶衍射方法进行了研究，Ｘ射线形貌观测到了在空间生长区域有一个扇形高完整区．双晶衍射表明，在这个扇形区回摆曲线最窄、强度较高．Abstract St-doped GaAs single crystal growth was carried out by floating zone melting under the microgravity conditions. The sample was cut along the growth axis from the ingot to have surface {110} for X-ray investigation, so the sample consisted of two parts, one part grown on the ground, the other part grown in the space. X-ray rocking curve result shows that there is a fan-shaped zone with high perfection in the space grown part. X-ray topograph shows that the impurity striations appear in the part grown of the ground, but disappear from the part grown in the space. All results indicate that the perfection of space-grown crystal is higher than that of ground-grown crytal.

关 键 词：砷化镓:硅 单晶生长 结构缺陷 X射线 微重力 半导体材料 

分 类 号：O474[理学—半导体物理] TN304.23[理学—物理]