δ掺杂的赝配HEMTAlGaAs／InGaAs／GaAs结构的光电流谱  

Photocurrent Spectroscopy of δ-Doped HEMTs Al_(0.30)Ga_(0.70)As/In_(0.15)Ga_(0.85)As/GaAs

作　　者：沈文忠[1] 黄醒良[1] 唐文国[1] 李自元[1] 沈学础[1] 

机构地区：[1]中国科学院红外物理国家实验室

出　　处：《Journal of Semiconductors》1995年第2期107-112,共6页半导体学报（英文版）

摘　　要：本文首次报道了δ掺杂的赝配高电子迁移率晶体管结构（ＨＥＭＴＳ）Ａｌ０．３０Ｇａ０．７０Ａｓ／Ｉｎ０．１５Ｇａ０．８５Ａｓ／ＧａＡｓ的光电流谱研究．实验观察到了ｎ＝１重空穴子带到ｎ＝１电子子带和ｎ＝２电子子带的激子吸收峰以及ＧａＡｓ本征吸收相位变化所引起的光电流结构，并对光电流谱随温度和偏压变化的行为进行了讨论．Abstract A photocurrent spectroscopy study has been made in δ-doped pseudomorphic HEMTs Al0.30Ga0.70As/In0.15GaAs at temperatures ranging from 4.0 K to room temperature under different bias (-3.0V-+3.0V).By aid of photoluminescence (PL)studies: two excitionic absorption peaks which are related to the transitions betwwn n=1heavy holes and n=1,2 electrons, as well as a photocurrent structure due to the phase variation of the GaAs intrinsic absorption have been observed.The behavior of the temperature and bias dependence of spectroscopy has also been discussed.

关 键 词：晶体管 HEMT 光电流谱 AIGAAS INGAAS 砷化镓 

分 类 号：TN320.3[电子电信—物理电子学]