用脉冲腐蚀制备发光多孔硅  

Preparation of Porous Silicon by Pulse Etching Method

作　　者：范洪雷[1] 侯晓远[1] 李喆深 张甫龙 俞鸣人 王迅[1] 

机构地区：[1]复旦大学表面物理国家重点实验室,复旦大学李政道物理学综合实验室

出　　处：《Journal of Semiconductors》1995年第2期113-117,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：采用脉冲腐蚀方法，研究多孔硅的动态腐蚀过程，测定了动态电流和时间的关系，提出并讨论了动态腐蚀机理．用脉冲腐蚀制备得到发光多孔硅，与直流腐蚀相比较，脉冲腐蚀能得到均匀性更好、发光更强的多孔硅，而且ＰＬ峰位有一定的蓝移，我们认为脉冲腐蚀是一种更优秀的制备方法，并对此作了初步的讨论．Abstract Pulse etching method is adapted to study the dynamical etching process in preparmg porous silicon. The relationship between the dynamical current and etching time is measured and is supposed to be due to the dynamical process of the reduction of HF in the etching holes and the diffusion of HF outside.Porous silicon samples prepared by pulse etching process have better uniformity,stronger luminescence intensity and some blueshift in PL spectra compared to that of the samples prepared by constant current etching process. It is suggested that pulse etching is a better method in preparing porous silicon.

关 键 词：发光多孔硅 脉冲腐蚀 多孔硅 制备 

分 类 号：TN304.120[电子电信—物理电子学]