反应气压对MWPCVD金刚石膜中非金刚石相碳含量的影响  

Influence of Gas Pressure on the Content of Non-diamond Carbon in MWPCVD Diamond Films

作　　者：舒兴胜[1] 邬钦崇[1] 梁荣庆[1] 

机构地区：[1]中国科学院等离子体物理研究所,合肥230031

出　　处：《真空科学与技术》2001年第2期162-165,共4页Vacuum Science and Technology

基　　金：8 63计划资助项目! (863 715 0 0 2 0 0 2 0 )

摘　　要：在水冷反应室式MWPCVD装置中以CH4 和H2 为反应气体进行了金刚石膜的沉积实验 ,研究了反应气体的压强对金刚石膜中非金刚石碳相含量的影响。实验发现 ,当微波输入功率较小时 ,随着反应气压的上升 ,沉积膜中非金刚石相碳的含量单调下降 ;当微波输入功率较大时 ,沉积膜中非金刚石相碳的含量先随着反应气压的上升而降低 。Influence of gas pressure on the content of non diamond phase carbon in diamond films, grown in CH 4/H 2 gas mixture by microwave plasma chemical vapor deposition (MWPCVD),was studied.We found that microwave input power and gas pressure may affect the content of the non diamond phase carbon.At low microwave input power,the content monotonously decreases with the increase of gas pressure,whereas at higher microwave input power,as the gas pressure increases,the content first decreases and then slowly increases.

关 键 词：微波等离子体化学气相沉积 金刚石膜 气压 非金刚石相 碳含量 制备 

分 类 号：TB43[一般工业技术] TQ163[化学工程—高温制品工业]