SILC Mechanism in Degraded Gate Oxide of Different Thickness  

MOSFET不同厚度薄栅老化中 SILC的机制(英文)

作　　者：王子欧[1] 卫建林[1] 毛凌锋[1] 许铭真[1] 谭长华[1] 

机构地区：[1]北京大学微电子学研究所,北京1000871

出　　处：《Journal of Semiconductors》2001年第4期414-417,共4页半导体学报（英文版）

摘　　要：It is shown that traps are generated asymmetrically in the thin gate oxides with different thickness during high field degradation,as well as the multi-mechanism plays role in the Stress Induced Leakage Current (SILC).These factors perform differently in gate oxide of different thickness.A comparison is drew between several analyzing models.Trap assisted tunneling is preferred for thinner samples,while Pool-Frankel like mechanism or thermal emission mechanism should apply to the thick ones.通过对栅电流和栅电压漂移的测量 ,证明了均匀 FN应力老化后栅氧化层中陷阱呈非均匀分布 .不同厚度的栅氧化层产生 SIL C的机制不尽相同 ,薄栅以陷阱辅助隧穿为主 ,类 Pool- Frankel机制在厚二氧化硅栅中起主导作用 .

关 键 词：SILC gate  oxide 

分 类 号：TN386[电子电信—物理电子学]