功率MOS器件SEB、SEGR测量系统的研制  

The study and fabrication of the SEB,SEGR measure system for the power MOS transistor

作　　者：王燕萍[1] 唐本奇[1] 耿斌[1] 杜凯[2] 

机构地区：[1]西北核技术研究所 [2]西安电力电子技术研究所,陕西西安710061

出　　处：《核电子学与探测技术》2001年第3期217-219,共3页Nuclear Electronics & Detection Technology

摘　　要：研制了功率 MOS器件单粒子烧毁、单粒子栅穿辐照效应实验用的电流测量及电源系统 ,该系统由栅极电源电路、漏极电源电路、漏极 RC振荡电路和 DUT栅极触发电路组成 ,具有栅 (漏 )极电压偏置、电流测量、过流保护、电容电阻选择等功能 ,经实验验证 。The system used in the experiment of single event burnout and single event gate rupture of power MOS transistors radiation effects has been developed. The system consists of a gate voltage supply circuit, a drain voltage supply circuit, a drain RC oscillatory circuit and a DUT gate trigger circuit.It has the capabilities of measuring the gate (or drain )voltage and current,over current protection and the selection of capacity and resistor. It has been proved by experiments that the system is reliable functional.

关 键 词：功率MOS器件 辐照效应 电压偏置 电流测量 电源系统 单粒子烧毁 单粒子栅穿 

分 类 号：TN386.1[电子电信—物理电子学] TL8[核科学技术—核技术及应用]