选区外延制作单片集成单脊条形电吸收调制DFB激光器  

Monolithic Integrated Single Ridge Stripe Electroabsorption Modulated DFB Lasers Using Selective Area LP-MOVPE

作　　者：刘国利[1] 王圩[1] 许国阳[1] 陈娓兮[1] 张佰君[1] 周帆[1] 张静媛[1] 汪孝杰[1] 朱洪亮[1] 

机构地区：[1]国家光电子工艺中心,中国科学院半导体研究所北京100083

出　　处：《中国激光》2001年第4期321-324,共4页Chinese Journal of Lasers

基　　金：86 3高技术计划! (项目编号 :30 7 11 1(15 ) );国家自然科学基金! (批准号 :6 9896 2 6 0 )资助项目

摘　　要：报道了采用选区外延生长技术制作的可实用的单脊条形电吸收调制DFB激光器。激光器的阈值为 2 6mA ,最大光功率可达 9mW ,消光比可达 16dB。减小端面的光反馈后 ,从自发发射谱上观察不到波长随调制电压的变化 ,调制器部分的电容为 1 5pF ,初步筛选结果显示阈值、隔离电阻、消光比基本没有变化 ,可应用在 2 5Gb/s的长途干线光纤传输系统上。The monolithic single ridge stripe electroabsorption modulated DFB laser (EML's) fabricated by selective area LP-MOVPE is reported. The threshold current of the EML's is 26 mA; the maximum output power i about 9 mW; the extinction ratio is more than 16 dB; no wavelength shift with modulator bias is observed from the ASE spectrum after the optical feedback being reduced; the capacitance of the modulator part is 1.5 pF. No obvious changes of threshold current, isolation resistance and extinction ratio are observed after the preliminary aging test. The EML's can be used in the 2.5 Gb/s long haul fiber communication systems.

关 键 词：选区外延 LP-MOVPE DFB激光器 电吸收调制器 脊型波导 单片集成电路 

分 类 号：TN248.4[电子电信—物理电子学]