p^+-n^--n结的势垒分布  

Barrier Distribution of a p^+-n^--n Junction

作　　者：赵普琴[1] 杨锡震[1] 李桂英[2] 王亚非[2] 

机构地区：[1]北京师范大学分析测试中心,北京100875 [2]中国科学院半导体材料科学开放实验室,北京100083

出　　处：《液晶与显示》2001年第1期48-51,共4页Chinese Journal of Liquid Crystals and Displays

基　　金：国家科委预研项目

摘　　要：GaP∶N绿色LED发光效率的提高有赖于对其结构参数的优化。 根据载流子分布的连续性， 由泊松方程自洽求解， 得出了半导体n^-－n结势垒分布的计算方法。 在此基础上，计入n^-区内的电位降， 计算了商用发光二极管p^+－n^-－n结构的势垒分布， 为整体结构的参数优化准备了必要的条件。The improvement of the luminescent efficiency of GaP∶N green LED depends on optimization of the structural parameters. In this paper, according to the continuity of carrier profile, a method of calculating the carrier profile of a semiconductor n--n junction has been obtained, by solving the Poisson equation self-consistently. Based on this, and taking the potential drop within the n- region into account, the barrier distribution of a p+-n--n structure used in commercial light emitting diodes has been calculated, which prepared a necessary condition for optimizing the structural parameters.

关 键 词：发光二级管 势垒 掺氮磷化镓 P-N结 

分 类 号：O475[理学—半导体物理]