倾斜结构InGaAsP/InP集成超辐射光源  

InGaAsP/InP Integrated Superluminescent Light Source with Tilted Structure

作　　者：刘杨[1] 曾毓萍 宋俊峰[1] 殷景志[1] 杜国同[1] 

机构地区：[1]吉林大学电子工程系集成光电子学国家重点联合实验室,长春130023

出　　处：《中国激光》2001年第5期412-414,共3页Chinese Journal of Lasers

基　　金：国家"8 6 3"高技术计划;国家自然科学基金!(6 97770 0 5 );教育部博士点基金资助课题

摘　　要：为提高半导体超辐射器件的输出功率 ,在原有的将超辐射发光管 (SLD)与半导体光放大器 (SOA)单片集成的基础上 ,将器件电流注入区中心轴线倾斜 6° ,制得了 1 5 μm倾斜结构的InGaAsP InP集成超辐射光源。发现这种新型结构的单片集成器件具有抑制激射的功能。在较低的电流注入下 ,得到了 38mW的脉冲超辐射输出功率。其光谱宽度 (FWHM )和平行、垂直于结平面的远场半宽分别为 16nm ,15°和 6 4°。同时 ,通过对该集成器件特性的研究 。Based on original idea about monolithic integration of the SLD (superluminescent diode) with SOA (semiconductor optical amplifier), the axis of current injection region was tilted by 6° with respect to the output facet normal, by this means, 1.5μm InGaAsP/InP integrated superluminescent light source with tilted structure has been fabricated. High superluminescent power of 38 mW was obtained at lower pumping level by co-operation of the two sections.The spectral full width at half maximum (FWHM) is 16 nm, and the FWHM far field pattern (FFP) parallel and perpendicular to the junction plane are 15° and 64°, respectively. A new phenomenon was discovered, in which the lasing action was suppressed by pumping the SLD section of the integrated device properly.

关 键 词：超辐射发光管 半导体光放大器 INGAASP 磷化铟 倾斜结构 超辐射光源 

分 类 号：TN245[电子电信—物理电子学]