以氮化铝陶瓷为基板的倒扣封装工艺研究  

Study of the Process of the Flip Chip Package Based on Aluminum Nitride Substrate

作　　者：胡向洋[1] 汪荣昌[1] 顾志光[1] 戎瑞芬[1] 邵丙铣[1] 宗祥福[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《固体电子学研究与进展》2001年第2期211-215,共5页Research & Progress of SSE

基　　金：国家自然科学基金重点项目资助 !(项目编号 6 9836 0 30 )

摘　　要：研究了以氮化铝为基板的倒扣封装的工艺。详细比较了氮化铝的各种金属化工艺。分别研究化学镀与激光诱导淀积实现金属化的方法。测量表明两种方法制备的金属层与氮化铝的粘附力均大于 10 MPa。The process of flip chip based on aluminum nitride is studied. Various methods to metallize aluminum nitride substrate are discussed. Electroless plating method and laser induced deposition method are respectively studied. The adhesion strength of the metal film made by two methods is excellent. The advantages and the application range of two methods is also summarized.

关 键 词：氮化铝 倒扣封装 化学镀 激光诱导淀积 陶瓷 基板 

分 类 号：TN304.82[电子电信—物理电子学]