PECVD生长氮化硅介质膜的工艺研究  

Research on Technology for Si_3N_4 Thin Film Grown by PECVD

作　　者：张顾万[1] 龙飞[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2001年第3期201-203,217,共4页Semiconductor Optoelectronics

摘　　要：对PECVD生长氮化硅介质膜的工艺条件进行了实验研究 ,获得了生长氮化硅介质膜的最佳工艺条件 ,制作出了高质量的氮化硅介质膜。对样品进行了湿法腐蚀和超声实验 ,在显微镜下观察无膜脱落现象发生。阐述了几种工艺参数对介质膜生长的影响。Research on growth technology for Si 3N 4 thin film by PECVD is carried out experimentally.Optimum process condition is obtained,and high quality Si 3N 4 thin film is successfully developed. Through wet etching and ultrasonic experiment ,no film falling is observed with microscope.Effect of some process parameters on the growth of the film is described.

关 键 词：PECVD 氮化硅 薄膜 介质膜 

分 类 号：TN304.24[电子电信—物理电子学]