^(60)Coγ射线低能散射对CMOS器件电离辐射效应的影响  

Influence of (60)~Co Source Lower Energy Diffusing on Ionizing Radiation Effects of CMOS Devices

作　　者：吴国荣[1] 周辉[1] 郭红霞[1] 林东升[1] 龚建成[1] 关颖[1] 韩福斌[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《微电子学》2001年第3期165-167,共3页Microelectronics

摘　　要：在60 Coγ射线辐射场中采用 Pb/ Al屏蔽和非屏蔽的方法 ,研究比较了低能散射对 CMOS器件电离辐射效应的影响。在理论计算基础上 ,设计了 Pb/ Al屏蔽盒。实验结果表明 ,低能散射占总电离辐射吸收剂量的 2 0 %左右 ,采用 Pb/ Al屏蔽盒可以消除低能散射的影响 ,能更可靠地进行微电子器件抗辐射加固水平的精确评估与对比 ;低能散射对 Kovar封装的器件产生剂量增强效应 ,剂量增强因子小于 2 .WT5”BZ]The influence of 60 [KG2/3]Co source lower energy diffusing on ionizing radiation effects of CMOS devices is studied using Pb/Al shielding and unshielding of irradiated devices A Pb/Al shielding box is designed Experimental results indicate that the lower energy diffusing accounts for about 20 percent of the total ionizing radiation dose Using Pb/Al shielding box, the influence of lower energy diffusing can be excluded, which makes it possible to evaluate and compare the hardness of microelectronic devices more accurately The lower energy diffusing has a dose enhancement effect on devices encapsulated in Kovar, and the Dose Enhancement Factor (DEF) (Kovar) is smaller than 2 0 [WT5HZ]

关 键 词：低能散射 电离辐射效应 CMOS器件 剂量增强效应 Γ射线 

分 类 号：TN386[电子电信—物理电子学]