氧气对MWPCVD制备金刚石膜的影响  

Influence of O_2 on Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

作　　者：舒兴胜[1] 邬钦崇[1] 梁荣庆[1] 

机构地区：[1]中国科学院等离子体物理研究所,合肥230031

出　　处：《真空科学与技术》2001年第4期281-284,290,共5页Vacuum Science and Technology

基　　金：8 6 3计划资助项目 (86 3 715 0 0 2 0 0 2 0 )

摘　　要：在水冷反应室式微波等离子体化学气相沉积装置中以混合的CH4 H2 O2 为反应气体 ,研究了O2 浓度对制备金刚石膜的影响。实验发现 ,很低浓度的O2 会显著促进金刚石的沉积 ,并稍稍抑制非晶C的沉积 ,因而沉积膜中非晶C的含量急剧下降 ;较高浓度的O2 会同时抑制金刚石和非晶C的沉积 ,但由于抑制金刚石的作用更强烈 ,沉积膜中非晶C的含量反而有所升高。另外 ,O2 的存在 。Diamond films were synthesized form CH4/H2/O2 gas mixture by microwave plasma chemical vapor deposition (MWPCVD) in a water-cooled reaction chamber. Influence of O2 concentration on the film growth was studied with laser Raman spectroscopy and scanning electron microscopy (SEM). The results show that very low O2 concentration markedly promotes diamond film deposition but slightly suppresses the amorphous carbon growth. Consequently, the content of amorphous carbon in the diamond films was drastically reduced. In contrast, higher O2 concentration slows down the deposition of diamond more severely than that of amorphous carbon and results in higher content of amorphous carbon in the films. In addition, the existence of O2 favorably affects the growth of diamond films with smaller grain sizes.

关 键 词：微波等离子体化学气相沉积 金刚石膜 氧气 制备 浓度 抑制作用 非晶碳 

分 类 号：TB43[一般工业技术] O484.1[理学—固体物理]