扫描静电力显微镜及其电荷捕获/释放技术  

Scanning electrostatic microscope and charge trapping/detrapping techniques

作　　者：王志勇[1] 张鸿海[1] 鲍剑斌[1] 郭文明[1] 汪学方[1] 

机构地区：[1]华中科技大学机械科学与工程学院,武汉430074

出　　处：《电子显微学报》2001年第3期232-237,共6页Journal of Chinese Electron Microscopy Society

摘　　要：介绍扫描静电力显微测量及用其实现电荷捕获释放的技术现状、发展动向 ,以及关键技术的一些最新成果。前者已被广泛应用于测量半导体表面电荷密度分布、表面电势以及铁电材料铁电体结构的研究中 ;后者可望用于研制速度和存贮容量都比现在提高成千上万倍的量子器件。最后 。This paper introduces scanning electrostatic microscope measurement and charge trapping/detrapping using EFM techniques, their latest development and innovative tendency. The former has been widely used in measuring surface charge density, surface potential of semiconductor and ferroelectric domain walls. The other has been expected to study the quatum devices with the storage ability and processing velocity more thousands of times than the conventional devices. This paper also pays more attention to the key techniques of EFM based on tuning fork and their solutions in the near future.

关 键 词：扫描探针显微镜 扫描力显微镜 静电力显微镜 电荷存储 捕获释放技术 扫描静电力显微镜 量子器件 测量技术 铁电材料 半导体 微晶振 

分 类 号：TN16[电子电信—物理电子学] TM93[电气工程—电力电子与电力传动]