poly—Si TFT 制作工艺探索  

EXPLORATION FOR TECHNOLOGY OF POLY-Si TFT

作　　者：张建军[1] 吴春亚[1] 李俊峰[1] 周祯华[1] 孟志国[1] 赵颖[1] 孙钟林[1] 

机构地区：[1]南开大学光电子所国家教委光学信息技术科学开放研究实验室

出　　处：《液晶与显示》1998年第1期40-45,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金

摘　　要：对ｐｏｌｙ—ＳｉＴＦＴ的制作工艺进行了研究。采用准分子激光晶化法制备了多晶硅薄膜，并以Ｍｏ、Ａｌ两种金属直接与有源层接触形成源漏电极，对这两种不同金属源漏电极ｐｏｌｙ—ＳｉＴＦＴ的性能进行了比较。研究了退火对其性能的影响，结果表明材料性能是符合要求的。おhe manufacture process of poly-Si TFT was researched The poly-Si thin film was crystallized from amorphous silicon film by excimer laser Sputtered Mo and evaporated Al were used for two kinds of the source and drain contact, and the characteristics of this two kinds of poly-Si TFTs were compared The effect of annealing for transport characteristic of poly-Si TFT was analyzed, and proved that the property of our poly-Si was accorded with the demands for TFT

关 键 词：poly-SiTFT 源漏接触 退火 制作工艺 准分子激光晶化 多晶硅薄膜 源漏电极 

分 类 号：TN873.93[电子电信—信息与通信工程] TN141.9