MOS结构中薄栅氧化层高场退火效应的研究  

STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE

作　　者：张进城[1] 郝跃[1] 朱志炜[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《物理学报》2001年第8期1585-1589,共5页Acta Physica Sinica

基　　金：中国国防科技预研项目 (批准号 :8 5 3 4)&&

摘　　要：深入研究了MOS结构中薄栅氧化层在高电场下的退火效应 ,对氧化层陷阱电荷的退陷阱机理进行了深入探讨 .通过实验和模拟对氧化层陷阱电荷的退陷阱机理和生长机理进行了比较 ,给出了满意的物理解释 .High electric field annealing effect in thin gate oxide of MOS structure is studied in depth, and the detrapping mechanisms of trapped charge in the gate oxide are investigated. Comparison between the growth mechanism and the detrapping mechanism of trapped charge in gate oxide is made by experiments and simulations. A satisfactory physical description is presented for explaining this effect. Comparison between annealing under negative and positive gate voltages shows that the former is more effective.

关 键 词：MOS结构 薄栅氧化层 高场退火 退陷阱 MOS器件 

分 类 号：TN305[电子电信—物理电子学]