ECR-PECVD制备SiO_2薄膜中衬底射频偏压的作用  

INFLUENCE OF RF SUBSTRATE BIAS ON SiO_2 FILMS PREPARED BY ECR PECVD

作　　者：张劲松[1] 任兆杏[1] 梁荣庆[1] 隋毅峰[1] 刘卫[1] 

机构地区：[1]中国科学院等离子体物理研究所,合肥230031

出　　处：《核聚变与等离子体物理》2001年第1期59-64,共6页Nuclear Fusion and Plasma Physics

摘　　要：采用微波电子回旋共振等离子体增强化学气相沉积 (ECR PECVD)技术在单晶衬底上制备了SiO2 薄膜 ,研究了射频偏压对薄膜特性的影响。通过X射线光电子能谱 (XPS)、傅里叶变换红外线光谱 (FTIR)、原子力显微镜 (AFM)和扫描隧道显微镜 (STM)三维形貌图测量等手段 ,对成膜特性进行了分析。实验结果表明 ,通过改变射频偏压的参数来控制离子轰击能量 ,对ECR PECVD成膜的内应力、溅射现象。Microwave electron cyclotron resonance plasma enhanced chemical vapor deposition was used to prepare silicon dioxide films on crystalline silicon substrate.The effects of RF bias on the properties of SiO 2 film have been studied.X ray photoelectron spectroscopy,Fourier transforms infrared spectroscopy,atomic force microscopy and three dimensional space morphology picture of scanning tunneling microscope were used to investigate the characterization of deposited films.Experimental results show that the stress,the sputtering,the microstructure,and the stoichiometry of the films are greatly influenced through changing the parameters of RF substrate bias to control ion bombardment energy.

关 键 词：电子回旋共振等离子体 SIO2薄膜 射频偏压 ECR-PECVD 二氧化硅薄膜 离子轰击能量 成膜特性 

分 类 号：TB43[一般工业技术] O53[理学—等离子体物理]