旁栅阈值电压与旁栅距的关系研究  

Study on the Relation between Sidegating Threshold Voltage and the Distance of Side-gate/MESFET

作　　者：丁勇[1] 毛友德[1] 夏冠群[2] 赵建龙[2] 

机构地区：[1]合肥工业大学,230009 [2]中科院上海冶金所,200050

出　　处：《固体电子学研究与进展》2001年第3期326-329,338,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目 (696760 0 3 )

摘　　要：旁栅效应是制约 Ga As器件及电路性能的有害寄生效应。文中理论推导并实验研究了旁栅阈值电压 Vth SG与旁栅距 LSG的关系 ,发现 Vth SG与 LSG成正比关系。这一结论对数字电路设计具有重要指导意义 ,在设计电路版图时可根据电路的逻辑电平摆幅 VSW选择器件之间的最小距离Sidegating effec t is a harmful parasitic effect to GaAs devices and circuits performance. In thi s paper we study the relation between th e sidegating threshold voltage(V th SG) and the distance of side-gate/MESF ET(L SG), and we find that the thres ho ld voltage varies linearly with the distan ce. This result is very important to des ign IC. When designing circuit layout, w e can select the smallest distance of FE Ts(L) according to the voltage swing( V SW).

关 键 词：旁栅阈值电压 旁栅效应 旁栅距 碰撞电离 MESFET 

分 类 号：TN386[电子电信—物理电子学]