脉冲中子辐照在硅中引起缺陷的研究  

Investigation of Induced-deffects in Pulse Neutron-irradiation Silicon

作　　者：袁晓利[1] 吴凤美[1] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,210093

出　　处：《固体电子学研究与进展》2001年第3期350-353,共4页Research & Progress of SSE

摘　　要：研究了脉冲中子辐照的中子嬗变掺杂 (NTD)硅二极管中缺陷的形成及其退火特征 ,并与热中子辐照样品进行了比较。深能级瞬态谱仪 (DL TS)测量表明硅中主要存在五类电活性缺陷 :氧空位 E1(Ec- 0 .19e V) ,不同荷电态的双空位 E2 (Ec- 0 .2 8e V)和 E4 (Ec- 0 .4 0 e V) ,双空位与氧杂质相结合的络合物 E3 (Ec- 0 .31e V) ,以及与样品材料原生缺陷有关的辐照感生缺陷 E5(Ec- 0 .4 8e V)。实验结果表明 ,脉冲中子辐照由于其高的中子能量和辐照剂量率 ,导致复杂络合物的浓度高于简单缺陷浓度。进一步 4 0Pulse neutron radiation induced trap s in neutron-transmutation doped(NTD) Si diodes and their annealing behaviors h ave been investigated by means of deep level transient spectroscopy(DLTS), and c ompared with the results of thermal neutron irradiated samples. Five types of tr aps were observed: oxygen vacancy E 1(E c-0.19 eV), divacanc y E 2(E c-0.28 eV), E 3(E c-0.31 eV), E 4( E c-0.40 eV), and E 5(E c-0.48 eV). Because of the hi gh energy and dosage of pulse neutrons, concentration of complex defects was hig her than that of the simple ones. The dissociation and reconstruction of the com plicated traps were observed in annealing process with temperature below 400℃.

关 键 词：脉冲中子辐射 深能级瞬态谱 缺陷 硅 

分 类 号：O474[理学—半导体物理]