CVD金刚石薄膜RIE掩模技术研究  

Study on Masks for Reactive Ion Etching (RIE)of CVD Diamond Film

作　　者：丁桂甫[1] 俞爱斌[1] 赵小林[1] 姚翔[1] 沈天慧[1] 

机构地区：[1]上海交通大学微米纳米研究院

出　　处：《微细加工技术》2001年第3期74-80,共7页Microfabrication Technology

摘　　要：金刚石薄膜反应离子刻蚀 (RIE)必须选用硬掩模 ,基于掩模刻蚀选择比和掩模图形化加工特性考虑 ,镍和镍钛合金掩模是较好选择 ,其中 ,NiTi合金薄膜具有刻蚀选择比高、加工工艺简单、图形化效果好的优势 ,Ni掩模特别是电镀方法制作的Ni掩模以其精确的尺寸控制能力、理想的多层结构模式和适当的刻蚀选择比而特别适合于精细结构加工时使用。使用上述掩模对金刚石薄膜进行RIE ,可以获得线条整齐规则、侧壁平滑陡直的优异加工效果。The hard masks should be used for RIE of diamond film.Considering the etching selectivity and patterniny process,Ni and TiNi alloy masks are the better selections.The TiNi alloy film has the advantages of high etching selectivity,simple processing procedure and good patterning effect.Ni mask,especially the one fabricated by electroplating,is specially suitable for manufacturing fine structure because of its capability to control precise dimesion,ideal multilayer structure mode and proper etching selectivity.The diamond microstructure with uniform lines and steep and smooth sidewall could be obtained when using the above masks for RIE of diamond film.

关 键 词：金刚石薄膜 反应离子刻蚀 掩模 

分 类 号：TN304.18[电子电信—物理电子学] TN305.7