离子束辅助淀积下Cu/Si系统相变研究  

A Study of Metallographic Change of Cu-Si on IBAD Condition

作　　者：张楠[1] 邱安平[1] 

机构地区：[1]黑龙江大学电子工程学院,黑龙江哈尔滨150080

出　　处：《哈尔滨理工大学学报》2001年第4期75-77,共3页Journal of Harbin University of Science and Technology

摘　　要：研究在离子束条件下硅基底上淀积金属薄膜及其界面结构在退火条件下金属硅化物的形成和变化特点，即１５ｋｅＶ的Ａｒ＋在ＩＢＡＤ条件下直接生成Ｃｕ１５Ｓｉ４相．ＩＢＡＤ复合薄膜样品在退火前无新相生成，而退火后形成ε相，不同于通常Ｃｕ－Ｓｉ退火反应生成ε相的相序．研究证明在Ｃｕ－Ｓｉ界面退火反应系统中，ε相的成核是得到稳定相结构的关键．In this article, metal films of Cu-Si deposited on the silcide base under the condition of ion beams, its boundary structure and the forming and changing characteristics of the metal silicide under that of annealing are studied. Namely, Cu15-Si4 phase is immediately formed on the IBAD with 15 keV Ar+. No new phase is formed from the sample of IBAD compound films be- fore the annealing, but after that is formed, the εphase whose order differs from that usually formed in the process of Cu-Si annealing reaction. In the above-mentioned system, the forma- tion of the εphase is the key to stabilizing the phase structure.

关 键 词：金属硅化物 相变 金属薄膜 铜硅界面退火反应 离子束辅助沉积 真空镀膜 

分 类 号：O484.1[理学—固体物理]