微波等离子体化学气相沉积法制备C_3N_4薄膜的结构研究  

STRUCTURAL CHARACTERIZATION OF C_3N_4 THIN FILMS SYNTHESIZED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

作　　者：张永平[1] 顾有松[2] 高鸿钧[1] 张秀芳[1] 

机构地区：[1]中国科学院物理研究所 [2]北京科技大学材料物理系,北京100083

出　　处：《物理学报》2001年第7期1398-1400,共3页Acta Physica Sinica

基　　金：国家自然科学基金! (批准号 :196740 0 9)&&

摘　　要：采用微波等离子体化学气相沉积法 ,用高纯氮气 (99.999% )和甲烷 (99.9% )作反应气体 ,在单晶Si(10 0 )基片上沉积C3N4薄膜 .利用扫描电子显微镜观察薄膜形貌 ,表明薄膜由密排的六棱晶棒组成 .X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β C3N4和α C3N4组成 ,并且这些结果与α C3N4相符合较好 .由虎克定律近似关系式计算了α 和β C3N4的傅里叶变换红外光谱和Raman光谱 ,实验结果支持C—N共价键的存在 .Crystalline carbon nitride films have been synthesized on Si substrates by microwave plasma chemical vapor deposition technique, using a gas mixture of nitrogen and methane. Scanning electron microscopy shows that the film consisted of hexagonal crystalline rods. X-ray diffraction and transmission electron microscopy indicate the films are mainly composed of α-and β-C 3N 4, and these results match more closely with α-C 3N 4 than with β-C 3N 4 phase. Fourier transform infrared (FTIR) and Raman spectra of carbon nitride were calculated through Hooke's law. The observed FTIR and Raman spectra support the existence of α- and β-C 3N 4 in the films.

关 键 词：微波等离子体 化学气相沉积法 C3N4薄膜 结构研究 

分 类 号：O613[理学—无机化学]