高N_2气流下在GaAs(001)上用MBE法生长InN(英文)  

Growth of InN on GaAs(001) under High N_2 Flux by MBE

作　　者：秦志新[1] 陈志忠[1] 张国义[1] 

机构地区：[1]北京大学物理系,介观物理实验室北京100871

出　　处：《发光学报》2001年第3期209-212,共4页Chinese Journal of Luminescence

基　　金：Project Supported by the National Natural Science Foundation of China( 6 9876 0 0 2 )

摘　　要：在N2 气压为 2 6 7× 10 -2 Pa ,5 0 0℃的条件下 ,用MBE方法在GaAs(0 0 1)衬底上生长了InN的外延层。生长期间 ,In流量以 3× 10 14 到 2 4× 10 14 atoms/cm2 ·s范围内变化。用X 射线衍射 (XRD)和反射高能电子衍射 (RHEED)法对InN膜进行了表征。发现在生长的初始阶段 ,所生长的InN属立方相 ,但随着外延层厚度的增加出现了InN层由立方相向六角相的相变。X 射线倒易空间图形测量表明的在GaAs(0 0 1)衬底上生长的六角相InN其cInN epilayers have been grown on GaAs(001)substrates by MBE at 500℃ under the N 2 pressure of 2 67×10 -2 Pa.During the growth,the In flux was varied from 3×10 14 to 24×10 14 atoms/cm 2 sec.The InN films were characterized by X ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) measurements.It is found that the cubic phase InN was grown at initial stage of growth, but the transition from cubic phase InN to hexagonal phase InN occurred with increase of the thickness of InN epilayer.The X ray reciprocal space mapping (RSM) measurements show that the hexagonal phase InN whose c axes are oriented in the GaAs<111>B direction is dominantly grown on (001) GaAs.

关 键 词：RHEED X-射线倒易空间图形 GAAS(001) 砷化镓 LnN 氮化铟 薄膜生长 MBE法 高氮气气流 N2 

分 类 号：TN304.205[电子电信—物理电子学]