SiC及其离子束技术在SiC研究中的应用  

SiC and Applications of the Technique of Ion Beam in SiC Study

作　　者：阳生红[1] 

机构地区：[1]中山大学物理系98博,广州510275

出　　处：《中山大学研究生学刊（自然科学与医学版）》2000年第1期8-12,共5页Journal of the Graduates Sun YAT-SEN University(Natural Sciences.Medicine)

摘　　要：本文阐述了宽禁带半导体材料SiC的晶体结构、材料特性及制备方法。同时综述了离子束技术在SiC研究中的应用。其中包括SiC的离子束合成、掺杂、器件隔离与钝化。In this paper, crystal structures, material properties and thin films preparation for SiC as a wide-band gap semiconductor material were presented. Simultaneously, applications of the technique of ion beam in SiC study were described in detail. These include ion beam synthesis, imurity, device isolation and inactivity.

关 键 词：SIC 晶体结构 离子束技术 宽禁带导体材料 碳化硅 离子束合成 掺杂 

分 类 号：TN304.24[电子电信—物理电子学]