BF_2^+注入对PMOS晶体管开启电压的影响  

The Effect on Threshold Voltage of PMOS Caused by BF_2~＋ Implantation

作　　者：黄维柱[1] 王勇[1] 邱晓海[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微电子学与计算机》2001年第3期46-49,共4页Microelectronics & Computer

摘　　要：文章研究了BF_2~＋注入对 PMOS晶体管开启电压的影响。试验发现，在我们的工艺条件下， BF_2~＋注入能量是影响 PMOS管开启电压的主要因素，能量高于 67.5Kev的 BF_2~＋注入可导致开启电压正漂。而退火对开启电压正漂没有影响， F离子也没有促进B穿透。The effect on threshold voltage VTH of PMOS transistors, caused by BF_2~＋ implantation is studied in this paper. The experimental results show that VTH shift depends mainly on the energy of implantation. Implantation of BF_2~＋ with energy higher than 67.5Kev can result in positive VTH shift. We also find that the anneal process has no effect on VTH shift, and the fluorine in gate oxide doesn't enhance boron penetration.

关 键 词：BF2^+注入 PMOS晶体管 开启电压 CMOS器件 

分 类 号：TN32[电子电信—物理电子学]