1.3 μm InGaAsP低电流超辐射发光二极管组件  

1.3 μm Wavelength InGaAsP Superluminescent Diode Module with Low Current

作　　者：李金良[1] 朱志文[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2001年第5期343-346,350,共5页Semiconductor Optoelectronics

摘　　要：设计并制作了用于高精度光纤陀螺的 1.3μm低电流超辐射发光二极管组件。采用隐埋异质结结构 ,实现了良好的电流限制和光限制 ,同时采用长腔结构来提高器件单程增益 ,从而获得了高的输出功率。组件具有工作电流小、输出功率高 ,以及光谱特性好等特点。测试结果表明 ,在 70mA工作电流下 ,组件尾纤输出功率大于 0 .1mW ,光谱宽度大于 30nm。m superluminescent diode modules are developed for high sensitive fiber optic gyroscopes. The precise control of injected current and emitting light is performed by using buried heterostructure and the single path gain is improved by applying long active cavity so as to increase the output power. A qualified chip is alignedly coupled with single mode polarization maitained fiber. The modules are all metal packaged with standard 14 pin shells by laser welding and are characterized by low injection , high output power and wide spectral width. Over 0.l mW output power and over 30 nm spectral width (FWHM) have been achieved at operating current of 70 mA.

关 键 词：超辐射发光二极管 光纤陀螺 INGAASP 组件 

分 类 号：TN312.8[电子电信—物理电子学]