Hopfield网络中二元正交记忆模式的吸引域分析  

Analysis of Binary Orthogonal Memory Patterns in Hopfield Neural Networks

作　　者：李玉鉴[1] 

机构地区：[1]北京工业大学计算机学院,北京100022

出　　处：《计算机学报》2001年第12期1334-1336,共3页Chinese Journal of Computers

摘　　要：在作为联想记忆的 Hopfield网络中 ,二元正交记忆模式的分析对网络记忆容量的研究起着重要作用 .文中提出了利用吸引指数的概念对各个二元正交记忆模式的吸引域进行估计的方法 .理论分析和计算机仿真表明 ,当网络容量不超过 0 .33N时 (比通常的 0 .15 N要好 ) ,每个二元正交记忆模式的吸引域至少包含一个汉明球 .In associative Hopfield neural networks, analyzing binary orthogonal memory patterns plays a very important role in studying their storage capacity. The conception of attractive index is proposed to estimate the basin of attraction for each binary orthogonal memory patterns with components in Hopfield neural networks. Theoretic analysis and computer simulation show that each memory pattern's basin of attraction contains at least one Hamming sphere when the storage capacity is less than 0.33N which is better than usual 0.15N.

关 键 词：二元正交记忆模式 记忆容量 吸引域 HOPFIELD网络 神经网络 

分 类 号：TP183[自动化与计算机技术—控制理论与控制工程]