稳态、瞬态X射线辐照引起的互补性金属-氧化物-半导体器件剂量增强效应研究  

STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS

作　　者：郭红霞[1] 陈雨生[2] 张义门[1] 周辉[2] 龚建成[2] 韩福斌[2] 关颖[2] 吴国荣[2] 

机构地区：[1]西安电子科技大学微电子学研究所,西安710000 [2]西北核技术研究所,西安710024

出　　处：《物理学报》2001年第12期2279-2283,共5页Acta Physica Sinica

摘　　要：重点开展了稳态、瞬态X射线辐照引起的金属 氧化物 半导体 (CMOS)器件剂量增强效应relativedoseenhance menteffect(RDEF)研究 .通过实验给出辐照敏感参数随总剂量的变化关系 ,旨在建立CMOS器件相同累积剂量时Χ射线辐照和γ射线辐照的总剂量效应损伤等效关系 .在脉冲X射线源denseplasmafocus(DPF)装置上 ,采用双层膜结构开展瞬态翻转增强效应研究 ,获得了瞬态翻转剂量增强因子 .The results are presented with emphasis on the relative dose-enhancement factor for complementary metal-oxide semiconductor (CMOS) devices irradiated by steady-state and transient pulsed X-rays. With the help of experimental study, sensitive parameter threshold voltage as a function of irradiation dose was obtained. So the equivalent relation of total dose damage is eslablished by comparing the response of devices irradiated by Co-60 gamma -rays and X-rays. By employing the X-ray transient pulsed sources, the research of X-rays transient upset enhancement effects is carried out using bi-laminate structure. Upset enhancement factor of X-rays are measured. These methods are provided for X-ray radiation hardening technology an effective evaluation method.

关 键 词：X射线 剂量增强因子 总剂量效应 金属-氧化物-半导体器件 辐照 剂量增强效应 

分 类 号：TN305[电子电信—物理电子学]