单片集成硅光接收器中p-i-n硅光电探测器的进展  

Development of p-i-n Si photodetector in monolithic integrated Si photoreceiver

作　　者：郭辉[1] 郭维廉[1] 吴霞宛[1] 陈迪平[2] 

机构地区：[1]天津大学电信工程学院,天津300072 [2]湖南大学电子科学与技术系,湖南长沙400082

出　　处：《半导体技术》2001年第10期52-57,共6页Semiconductor Technology

摘　　要：介绍了单片集成硅光接收器的研究背景、硅光电探测器工作机理以及它对实现高性能单片集成硅光接收器的影响，回顾总结了近年来的研究进展，并报道了我们的研究结果，展望了今后的发展。Background on which the monolithic integrated silicon photoreceiver developed is presented.The mechanism of the silicon photodetector and its impediments to the fabrication of high performance monolithic integrated silicon photoreceiver are discussed.Works including some of our experimental results in this field are reviewed and prospects are offered.

关 键 词：单片集成电路 p-i-n硅光电探测器 SOI 单片集成硅光接收器 

分 类 号：TN36[电子电信—物理电子学] TN43