动态应力下MOS器件热载流子效应研究  

Study on Hot-carrier Effects in MOSFET under Dynamic Stress

作　　者：刘红侠[1] 郝跃[1] 孙志[1] 

机构地区：[1]西安电子科技大学微电子所,710071

出　　处：《固体电子学研究与进展》2001年第4期439-447,共9页Research & Progress of SSE

基　　金：国防预研资助项目 (项目编号 :G982 5 74 1)

摘　　要：研究了 MOS器件中的热载流子效应 ,在分析了静态应力下 MOSFET寿命模型的基础上 ,提出了动态应力条件下 MOSFET的寿命模型。此外 ,还研究了沟道热载流子的产生和注入与器件偏置条件的关系 ,讨论了热载流子效应对电路性能的影响。通过对这些失效因素的研究和通过一定的再设计手段 。The hot carrier effects(HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress. In addition, the relations between generation and injection of channel hot carrier and bias conditions of devices are investigated and the impacts of HCE on circuit performance are also discussed. The device degradation induced by HCE can be reduced greatly by studying these failure factors and redesigning the circuits.

关 键 词：金属-氧化物-半导体器件 热载流子效应 动态应力 

分 类 号：TN386[电子电信—物理电子学]