透明导电IMO薄膜的载流子浓度测量  

Measurement of Carrier Concentration of Transparent Conductive IMO Films

作　　者：孟扬[1] 沈杰[1] 蒋益明[1] 刘键[1] 林剑[1] 杨锡良[1] 陈华仙[1] 章壮健[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《光电子技术》2001年第4期245-250,共6页Optoelectronic Technology

摘　　要：用反应蒸发法制备的掺钼氧化铟 ( In2 O3:Mo,IMO)薄膜在可见光区域的平均透射率 (含 1 .2 mm厚玻璃基底 )超过 80 % ,电阻率最低达 1 .7× 1 0 - 4Ω·cm。采用等离子振荡波长法、van-der-Pauw法和光谱拟合法等三种方法对IMO薄膜和 ITO薄膜的载流子浓度进行了测量和比较 ,结果表明 IMO薄膜的载流子浓度还不到 ITO薄膜的三分之一。因此 ,IMO薄膜对可见光的吸收小 ,有很大的发展空间可以通过提高载流子浓度而进一步提高电导率 ,对近红外线也有较高的透射率 。The high quality transparent conductive thin film In 2O 3∶Mo(IMO) can be prepared by normal thermal reactive evaporation. The electrical resistivity as low as 1.7×10 -4 Ω·cm was obtained, and the average total visible light transmittance of the IMO film with the glass substrate was over 80%. Plasmatic wavelength method, van der Pauw method and optical spectra fitting method were applied to measure and compare the carrier concentrations of IMO and ITO. The result showed that the carrier concentration of IMO was less than one third of that of ITO.So,the absorptance of visible light in IMO is lower than in ITO. There might be more space to improve the conductivity of IMO. Because of the high transmittance of near infrared in IMO, there might be more new fields to use transparent conductive thin film.

关 键 词：透明导电薄膜 掺钼氧化铟 载流子浓度 

分 类 号：TN304.055[电子电信—物理电子学]