低功耗IGBT(LPL-IGBT)及其仿真  

A Novel Low Power Loss IGBT (LPL-IGBT) and Its Simulation

作　　者：吴郁[1] 陆秀洪[1] 亢宝位[1] 王哲[1] 程序[1] 高琰[1] 

机构地区：[1]北京工业大学电子信息与控制学院,北京100022

出　　处：《Journal of Semiconductors》2001年第12期1565-1571,共7页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (6983 60 10 )~~

摘　　要：提出了一种新结构的 IGBT,取名为低功耗 IGBT(L PL- IGBT) ,它具有离子注入形成的超薄且轻掺杂的背P型发射区 ,从而具有 NPT- IGBT的优点 ;同时具有由衬底预扩散残留层构成的 n型缓冲层 ,又具有 PT- IGBT的优点 .计算机仿真结果证明 ,它的关断损耗比 PT- IGBT和 NPT- IGBT降低一倍左右 .它的结构比A new structure IGBT,named Low Power Loss IGBT (LPL IGBT) is proposed.It keeps the advantages of NPT IGBTs because of its very thin and lightly doped p type back emitter formed using ion implantation.Meanwhile,it also takes the advantages of PT IGBTs due to its n type buffer layer which is the residual layer of the pre diffused n + region at the backside of the n - substrate.Simulation results show that its turn off power loss is almost a half of that of the PT IGBT or NPT IGBT.Furthermore,its structure is more suitable for practical production than FSIGBT.

关 键 词：仿真 IGBT 晶体管 

分 类 号：TN323.4[电子电信—物理电子学]