PMOSFET's热载流子退化模拟及寿命评估的统一模型  

A Unified Model for Hot-Carrier-Induced Degradation Simulation and Lifetime Prediction of PMOSFET's

作　　者：张进城[1] 郝跃[1] 朱志炜[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2001年第12期1586-1591,共6页半导体学报（英文版）

基　　金：国防预先研究资助项目 (项目编号 :8.5 .3 .4)~~

摘　　要：对 PMOSFET's几种典型器件参数随应力时间的退化规律进行了深入研究 ,给出了一个新的器件退化监控量 ,并建立了不同器件参数退化的统一模型 .模拟结果和测量结果的比较表明 ,新的退化模型具有较高的准确性和较宽的适用范围 .新的退化模型不但可以用于器件参数退化量的模拟 。The degradation characteristics of several typical device parameters in PMOSFET's with stress time are studied.A new degradation monitor is presented and a unified degradation model for different device parameters is proposed.Comparison between simulation results and measurement results shows that the degradation model has good accuracy and wide applicable range.The new model is useful for both simulation of device parameter degradation and device lifetime prediction.

关 键 词：PMOSFET 热载流子退化 退化模拟 寿命评估 场效应晶体管 

分 类 号：TN386.1[电子电信—物理电子学]