低能He注入局域寿命控制电导调制型功率器件输运模型  

A Transport Model for Conductivity Modulation Power Device with Localized Lifetime Control by Low Energy He Ion Implantation

作　　者：方健[1] 李肇基[1] 李鸿雁[1] 杨健[1] 

机构地区：[1]电子科技大学微电子研究所,四川成都610054

出　　处：《电子学报》2001年第8期1072-1075,共4页Acta Electronica Sinica

基　　金：国家"九五"军事电子预研项目 (No.8.3 .5 .2 )

摘　　要：提出一种低能He注入局域寿命控制电导调制型功率器件的双极输运模型 .借助三区双极输运方程导出稳态的非平衡载流子浓度分布和正向压降 .借助电荷控制法并引入有效寿命概念获得反向恢复时间 .理论分析和实验结果表明这种器件的反向恢复时间减小到常规器件的 1/ 2以下 ,而正向压降仅增加 10 % .A transport model for conductivity modulation power devices with localized lifet ime control by low energy He ion implantation is developed in this paper.The dis tribution of carriers and the forward drop of a conductivity modulation power de vice with localized lifetime control is obtained,based on the solution of 3-reg i on ambipolar transport equations.The reverse recovery time is also obtained by u sing charge-controlled method.The results of the theoretical analysis and the e xperiments demonstrate that the reverse recovery time of power devices decreases to below 1/2,and forward drop only increases by a factor of 0~{*1~}1 times.

关 键 词：电导调制 功率器件 氦离子注入 局域寿命控制 输运模型 

分 类 号：TN32[电子电信—物理电子学]