Si/SiGe/Si双异质结晶体管(HBT)的负阻特性  

Negative Resistance Characteristics of Si/SiGe/Si Double Heterojunction Bipolar Transistors

作　　者：张万荣 李志国[1] 王立新[1] 汪东[1] 崔福现[2] 孙英华[1] 程尧海[1] 陈建新[1] 沈光地[1] 罗晋生[3] 

机构地区：[1]北京工业大学电子系,北京100022 [2]信息产业部电子第13研究所,河北石家庄050051 [3]西安交通大学微电子研究所,陕西西安710049

出　　处：《电子学报》2001年第8期1132-1134,共3页Acta Electronica Sinica

基　　金：北京市自然基金 (No .4982 0 0 4 ) ;北京市科技新星项目基金 (No.952 871 90 0 )

摘　　要：同质结硅双极晶体管在共射极状态下工作中 ,在高集电极———发射极电压、大电流下 ,由于热电正反馈 ,容易发生热击穿 ,这限制了晶体管的安全工作区域。本文报道了在大电流下 ,由于热电负反馈 ,重掺杂基区Si/SiGe/HBT出现了负阻特性 ,并对这一现象进行了新的解释 ,认为这是由于大电流下耗散功率增加 ,基区俄歇复合导致电流增益随温度增加而减小的结果 .这一现象有利于改善大电流下双极晶体管的抗烧毁能力 。For homo-junction Si bipolar transistor operation under common emitter,because of the positive feedback of thermoelectricity,thermal breakdown occurs easily at high collector--emitter voltage and high current,this decreases the safe oper ation area of transistors.In this paper,due to negative feedback of thermoelectr icity,negative resistance characteristics of Si/SiGe/Si double hetero-junction bipolar transistors with heavily doped base at high currents is reported.A new i nterpretation to this phenomenon is given.This is resulted from Auger recombinat ion in the base and decrease in current gain at high current as temperature incr eases.This phenomenon has benefit to improve anti-burnout capability of bipolar transitors.The results suggest that Si/SiGe/HBT is suitable for high power appl ications.

关 键 词：异质结双极晶体管 负阻特性 输出特性 硅 锗 

分 类 号：TN322.8[电子电信—物理电子学]