PD SOI NMOSFET翘曲效应的温度模型  

An Analytical Temperature0Dependent Kink Effect Model of PD SOI NMOSFET

作　　者：张海鹏 魏同立[1] 冯耀兰 姚炜 宋安飞 

机构地区：[1]东南大学微电子中心,南京210096

出　　处：《Journal of Semiconductors》2001年第10期1320-1324,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助重点项目 (批准号 :6 9736 0 2 0 )~~

摘　　要：报道了一个部分耗尽 (PD) SOI NMOSFET翘曲效应的温度解析模型 .该模型从 PD SOI NMOSFET器件的物理结构 ,即由顶部的 NMOSFET和底部的寄生 BJT构成这一特点出发 ,以一定温度下 PD SOI NMOSFET体-射结电流与漏 -体结电流的动态平衡为核心 ,采用解析迭代方法求解 ,得出漏 -体结碰撞电离产生的空穴在体区中近源端积累达到饱和时的体 -射结电压 ,及漏 -体结和体 -射结电流的各主要分量 ,进而得到了 PD SOI NMOSFET翘曲效应漏电流的温度解析模型 ,并将一定条件下的模拟结果与实验结果进行了比较 。An analytical temperature dependent kink effect model of PD(Partially Depleted) SOI NMOSFET are described,whose physical structure consists of a top NMOSFET and a bottom parasitical BJT.Based on the dynamic balance between the currents flowing through the body emitter and drain body junctions at a given temperature,it is found when the dynamic balance conditions are satisfied,the hole accumulation generated by impact ionization gets saturated.Through the analytical iteration,the voltage drop of body emitter junction and all current components through the body emitter and drain body junctions are obtained.Thus,the analytical temperature dependent model of the kink is derived and experimentally verified.The simulated results agree with our experimental results very well.

关 键 词：PD SOI NMOSFET 翘曲效应 温度解析模型 场效应晶体管 

分 类 号：TN386.5[电子电信—物理电子学]