利用三步法MOCVD生长器件质量的GaN  

Device Quality GaN on Sapphire Grown by Three-step MOCVD

作　　者：刘宝林[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《半导体光电》2001年第6期428-432,共5页Semiconductor Optoelectronics

基　　金：福建省自然科学基金重点资助项目 (E982 0 0 0 1)

摘　　要：在传统的二步MOCVD外延生长的基础上 ,报道了一种在低压MOCVD中用三步外延生长GaN材料的新方法 ,它在生长低温缓冲层前 ,用原子层的方法生长一层高质量的AlN层来减少Al2 O3与GaN缓冲层之间的应力以提高缓冲层的质量 ,从而提高外延层GaN的质量 。An ALE grown AlN layer has been developed to improve the quality of GaN on Al 2O 3 substrate by LP MOCVD.An ALE AlN layer grown on Al 2O 3 substrate is of high quality and the structure is similar to that of GaN,and the stress between Al 2O 3 substrate and GaN epilayer has been released.By using this method, the orientation of substrate extends to GaN epilayer, and the column tilt and twist of the crystalline grain can be improved so that device quality GaN is obtained.

关 键 词：MOCVD 原子层外延 三步外延 器件质量 外延生长 氮化镓 

分 类 号：TN304.054[电子电信—物理电子学]