微波功率对a-C:F薄膜结构和光学性质的影响  

The Influence of Microwave Power on the Structure and the Optical Property of a-C:F Thin Film

作　　者：黄峰[1] 程珊华[1] 宁兆元[1] 杨慎东[1] 叶超[1] 甘肇强[1] 

机构地区：[1]苏州大学物理系,江苏苏州215006

出　　处：《材料科学与工程》2001年第4期32-36,共5页Materials Science and Engineering

摘　　要：用苯 (C6H6)和四氟甲烷 (CF4 )混合气体作源气体 ,用微波电子回旋共振等离子体化学气相沉积技术制备了含氟非晶碳膜 (a C :F)。着重讨论了输入的微波功率对成膜结构和性质的影响。我们对沉积的膜作了膜厚、扫描电子显微表面形貌 (SEM)、紫外 -可见光透射谱 (UV -VIS)、傅立叶红外变换 (FTIR)等的测量。结果表明随着微波功率的增加沉积速率一直在上升 ;同时膜中缺陷增多 ;从FTIR的结果我们发现膜中主要以C -F、CF2 和F -芳基成键 ;通过UV -VIS吸收谱的测量的结果我们求出了折射率和光学带隙 ;并且将光学带隙和膜中的sp2a C:F thin films are deposited by microwave electron cyclotron resonance plasma chemical vapor deposition(ECR CVD)using CF 4 and C 6H 6 as source gases.We focus on the influence of microwave power on the structure and the optical property of a C:F thin film.It shows that deposition rate and defects increase with the increase of microwave power.From the UV-UIS spetrum we caculate the refractive index and the optical gap.From the FTIR spetrum we know the main bonds of the film are C F、CF 2 and F ary1.In addition we demonstrate the relationship between the optical gap and the aromatic carbon(sp 2)concentration.

关 键 词：a-C:F膜 微波功率 结构 光学性质 含氟非晶碳膜 微波电子回旋光振等离子化学气相沉积 

分 类 号：O484[理学—固体物理]