300mm硅单晶的缩颈生长及应力分析  

Necking-down Growth and Stress Analysis for 300 mm CZ Silicon Single Crystals

作　　者：程景柏[1] 屠海令[1] 周旗钢[1] 王敬[1] 常青[1] 张果虎[1] 方锋[1] 

机构地区：[1]北京有色金属研究总院,北京100088

出　　处：《稀有金属》2001年第4期266-268,共3页Chinese Journal of Rare Metals

摘　　要：对不同直径颈部晶体进行了拉伸实验及断口形貌观察 ,颈部晶体的断裂属于脆性断裂 ,增大晶体颈部直径可以增大其承受拉力 ,从而可以制得更大重量的单晶。缩颈生长工艺条件会对颈部晶体的抗拉强度产生影响。Tensile tests for the neckings with different diameters were made, and then the fracture morphology of the neckings was analyzed by scanning electron microscopy(SEM). The surface morphology demonstrates that the fracture is fragile. The large seeds can support crystals grown from large poly silicon charge sizes. It is indicated that the necking down growth conditions have certain effects on the tensile stress limit of the neckings. The fracture mechanism of neckings was discussed.

关 键 词：硅单晶 缩颈 脆性断裂 抗拉强度 晶体生长 应力分析 

分 类 号：TN304.12[电子电信—物理电子学]