Near-Infrared Si_(0.7)Ge_(0.3)/Si p-i-n Photodetector Fabricated on SOI in CMOS Technology  

CMOS兼容近红外Si_(0.7)Ge_(0.3)/Si p-i-n(SOI)光电探测器(英文)

作　　者：郭辉[1] 郭维廉[1] 郑云光[1] 黎晨[2] 陈培毅[2] 李树荣[1] 吴霞宛[1] 

机构地区：[1]天津大学电信工程学院,天津300072 [2]清华大学微电子研究所,北京100084

出　　处：《Journal of Semiconductors》2002年第1期16-20,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :6983 60 2 0 )~~

摘　　要：A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.报道了一种采用 U HV/CVD锗硅工艺和 CMOS工艺流程在 SOI衬底上制作的横向叉指状 Si0 .7Ge0 .3/Si p- i-n光电探测器 .测试结果表明 :其工作波长范围为 0 .7～ 1.1μm,在峰值响应波长为 0 .93μm,响应度为 0 .38A/W.在3.0 V的偏压下 ,其暗电流小于 1n A,寄生电容小于 1.0 p F,上升时间为 2 .5 ns.其良好的光电特性以及与 CMOS工艺的兼容性 ,为研制能有效工作于近红外光的高速、低工作电压硅基光电集成器件提供了一种新的尝试 。

关 键 词：SOI SiGe p  i  n photodetector photodetecting 

分 类 号：TN215[电子电信—物理电子学]