通过直接栅电流测量研究PMOSFET's热载流子损伤  

Hot-Carrier Damage of PMOSFET's Identified by Direct Gate Current Measurement

作　　者：张进城[1] 郝跃[1] 刘海波[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2002年第1期61-64,共4页半导体学报（英文版）

基　　金：国防预先研究基金资助项目 (项目编号 :8.5 .3 .4)~~

摘　　要：通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中 PMOSFET's热载流子损伤的生长规律 .由此 ,给出了热载流子引起 PMOSFET's器件参数退化的准确物理解释 .The growth laws of hot carrier damage of PMOSFET's during the hot carrier degradation and the high field annealing are studied by direct gate current measurement.An accurate physical explanation for the hot carrier induced device parameter degradation of PMOSFET's is presented.It is shown that the direct gate current measurement is a good method of studying the device damage growth and device parameter degradation.

关 键 词：直接栅电流测量 热载流子损伤 PMOSFET 场效应管 

分 类 号：TN386.1[电子电信—物理电子学]