透射式GaAs光电阴极AlGaAs/GaAs外延层在热应力作用下晶格弯曲的倒易点二维图研究  

THE RECIPROCAL SPACE MAPPING OF CURVED AlGaAs/GaAs EPITAXIAL LAYER BONDED ON GLASS WINDOW OF TRANSPARENT GaAs PHOTOCATHODE

作　　者：李晓峰[1] 张景文[1] 高鸿楷[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所,光电子学研究室,西安710068

出　　处：《光子学报》2002年第2期200-204,共5页Acta Photonica Sinica

摘　　要：本文介绍了倒易点及其倒易点二维图的概念、倒易点形状及其倒易点二维图同晶格形变的关系 ,推导了热应力作用下双层膜发生弯曲的理论公式 ,阐明了晶格弯曲的原因和晶格倒易点二维图展宽的方向 ,分析了 Ga As光电阴极 Al Ga As/ Ga As外延层的实测倒易点二维图 ,最后提出了降低 Al Ga As/ GaThis paper explained the concepts of reciprocal lattice point and reciprocal space mapping,illustrated the relationship between reciprocal lattice point and crystal dimension,the relationship between reciprocal space mapping and curvature of lattice,deduced the formula about curvature radius of bi-layer film,elaborated the extending direction and reason of reciprocal space mapping of curved lattice ,analysed the reciprocal space mapping of AlGaAs/GaAs epitaxial layer of GaAs photocathode.Besides the methods of degrading thermal strain were presented.

关 键 词：倒易点 二维图 热应力 半导体 透射式GAAS光电阴极 砷化镓 AlGaAs/GaAs外延层 镓铝砷化合物 晶格弯曲 X射线衍射 

分 类 号：TN013[电子电信—物理电子学] O471.4[理学—半导体物理]