透射式GaAs光电阴极AlGaAs/GaAs外延层MOCVD过程中应变结构形成的研究  

THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS

作　　者：李晓峰[1] 张景文[1] 高鸿楷[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所,光电子学研究室,西安710068

出　　处：《光子学报》2002年第2期205-208,共4页Acta Photonica Sinica

摘　　要：本文介绍了 Al Ga As/ Ga As外延层生长的应变状况的生长温度控制模型 ,并根据Al Ga As/ Ga As外延层 X射线衍射摇摆曲线的分析从实验上验证了 Al Ga As/ GaThe strained states of AlGaAs and GaAs epitaxial layers of transparent GaAs photocathode have great influences on its photoemission efficiency.During the growth process of AlGaAs and GaAs epitaxial layers by the MOCVD technology,the AlGaAs and GaAs epitaxial layers keep their own relaxed lattice parameters and no stresses existed in AlGaAs and GaAs epitaxial layers.Howerver,when AlGaAs and GaAs epitaxial layers cooled down,there would be several kinds of possible strained states existed in AlGaAs and GaAs epitaxial layers because of their lattice mismatch and thermal expansion coefficient mismatch.Furthermore these possible strained states of AlGaAs and GaAs epitaxial layers depended on their own growth temperture.This paper elaborated the temperture-depended strain model of AlGaAs and GaAs epitaxial layers.Besides,the evidence of temperture-depended strain models was given in this paper.

关 键 词：应变结构 晶格常量 透射式GAAS光电阴极 X射线衍射 AlGaAs/GaAs外延层 MOCVD 镓铝砷化合物 砷化镓 生长温度控制模型 

分 类 号：TN103[电子电信—物理电子学] TN304.205