双层膜结构测量CMOS器件X射线相对剂量增强因子及其理论模拟  

Measurement of X-ray relative dose-enhancement factor for CMOS device using bi-laminate structure and its simulation

作　　者：郭红霞[1] 陈雨生[1] 张义门[2] 周辉[1] 吴国荣[1] 林东升[1] 韩福斌[1] 关颖[1] 龚建成[1] 

机构地区：[1]西北核技术研究所 [2]西安电子科技大学微电子所,陕西西安710000

出　　处：《核电子学与探测技术》2002年第1期47-51,共5页Nuclear Electronics & Detection Technology

摘　　要：首次在国内提出了一种双层膜结构相对测量法。用该方法测量了 CMOS器件 X射线的相对剂量增强因子 RDEF(Relative Dose Enhancement Factor)。同时用 Monte- Carlo粒子输运方法计算了实验条件下 Al/ Au/ Si、Au/ Al/ Si结构界面过渡区剂量分布 ,理论模拟与实验验证 ,符合较好。In this paper the method of relative measurement of bi laminate structure is first adopted in our country. The radiation effects of CMOS device are determined by this method, and experimental results are provided. RDEF are calculated by simulation of Monte Carlo simulation of particle transportation, and results are coincident with measured dose enhancement factor. RDEF of X rays are measured using bi laminate structure.

关 键 词：双层膜结构 剂量增强 粒子输运模拟 相对增强因子 相对测量法 平衡剂量 CMOS器件 X射线 半导体器件 辐射效应 

分 类 号：TN386.1[电子电信—物理电子学] O571.33[理学—粒子物理与原子核物理]