铟镓氮薄膜的光电特性  

Optical and Electronic Properties of InGaN Thin Film Layers

作　　者：韩培德[1] 刘祥林[1] 王晓晖[1] 袁海荣[1] 陈振[1] 李昱峰[1] 陆沅[1] 汪度[1] 陆大成[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学实验室,北京100083

出　　处：《Journal of Semiconductors》2002年第2期143-148,共6页半导体学报（英文版）

基　　金：国家自然科学基金 (No.60 0 860 0 1);国家重点基础研究专项经费 (No.G2 0 0 0 0 683 )资助项目~~

摘　　要：用金属有机物气相外延设备 ,在氮化镓 /蓝宝石复合衬底上快速外延生长铟镓氮薄膜 ,并对其进行了 X射线三晶衍射、光致发光、反射光谱及霍尔测量等实验测试 .确定该薄膜为单晶 ,其中 In组分可以从 0增加到 0 .2 6 ;在光致激发下发光光谱为单峰 ,且峰值波长在 36 0～ 5 5 5 nm范围内可调 ;其发光机理被证实为膜内载流子经带隙跃迁而直接复合 ;并具有很高的电子浓度 .但 In Ga N薄膜的结晶质量却随着InGaN layers grown on GaN/Al 2O 3 complex substrates by metalorganic vapor phase epitaxy (MOVPE) are studied by X ray diffraction,photoluminescence (PL),optical reflectance and Hall measurements.It is found that: (1) these InGaN layers are the single crystals,and their In composition could be increased from 0 to 0 26; (2) single peak,no multi peaks,in the photoluminescence spectra can be controlled between 360 and 555nm;(3) these photoluminescence are from direct carrier combination over energy gap,instead of indirect combination through impurity levels; (4) there is high electron density in the layers; (5) the crystalline quality of InGaN layers decreases with the increasing of In composition.

关 键 词：MOVPE 铟镓氮薄膜 光电特性 外延生长 

分 类 号：TN304.26[电子电信—物理电子学] TN304.055