Monte Carlo方法研究低能电子束曝光沉积能分布规律  

Studies of energy dissipation distribution in low-energy electron beam lithography by Monte Carlo method

作　　者：任黎明[1] 陈宝钦[1] 谭震宇[2] 

机构地区：[1]中国科学院微电子中心,北京100029 [2]山东大学电气工程学院,济南250061

出　　处：《物理学报》2002年第3期512-518,共7页Acta Physica Sinica

基　　金：国家"九五"科技攻关项目 (批准号 :97 76 2 0 3 0 2 );国家重点基础研究项目 (批准号 :G2 0 0 0 0 36 5 0 4)资助的课题~~

摘　　要：建立一个描述低能电子在多元多层介质中散射的物理模型 ,运用MonteCarlo方法模拟低能电子在靶体胶衬底中的复杂散射过程 ,在此基础上通过大量计算研究入射束能、胶层厚度、衬底材料等不同曝光条件对抗蚀剂沉积能密度分布的影响 ,获得沉积能分布规律 :适量的低束能、薄胶层、低原子序数衬底可以使前散射电子对胶中沉积能密度分布的贡献增大、背散射电子的贡献减小 ,从而提高曝光分辨率 .A physical model describing the scattering processes of low-energy electrons is proposed. The Monte Carlo method was applied to simulate the complex scattering processes of Gaussian-distribution low-energy electrons in the resist substrate target. And on this basis. the influences of different exposure conditions such as incident beam energy, resist thickness and substrate material on energy dissipation density were investigated to obtain the regularity of energy dissipation distribution. It is indicated that appropriately low beam energy, thin resist and low atomic number substrate can increase the contribution of forward scattering electrons to energy dissipation density distribution in the resist and reduce the contribution of backscattering electrons and thus improve the exposure resolution.

关 键 词：电子束曝光 MonteCarlo方法 低能电子散射 能量沉积 大规模集成电路 超大规模集成电路 

分 类 号：TN305.7[电子电信—物理电子学]